Long-wavelength type-II photodiodes operating at room temperature

IEEE Photonics Technology Letters

Volumn 13, Issue 5, 2001, Pages 517-519

  Mohseni, H ^b   Razeghi, M ^a,b  

^a IEEE   (United States)

^b Northwestern University   (United States)

Author keywords

Infrared detectors; Infrared imaging; Photodiodes; Semiconductor devices; Superlattices

Indexed keywords

CUTOFF WAVELENGTH; MICROBOLOMETERS; PEAK DETECTIVITY;

ATOMIC FORCE MICROSCOPY; BOLOMETERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; INFRARED DETECTORS; INFRARED IMAGING; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

PHOTODIODES;

EID: 0035335355     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.920771     Document Type: Article

References (12)

1. Non-equilibrium mode of operation of narrow-gap semiconductor devices
2. Room temperature narrow gap semiconductor diodes as sources and detectors in the 5-10 μm wavelength region
3. Continuous-wave operation of λ = 3.25 μm broadened-waveguide W quantum-well diode lasers up to T = 195K
4. xSb superlattice infrared photodiodes
5. Interface-induced suppression of the Auger recombination in type-II InAs-GaSb superlattices
6. Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrate for the 8-12 μm atmospheric window
7. +-on-p versus p-on-n structures
8. 2 laser heterodyne detector operating at 250 K
9. xTe nonequilibrium diodes
10. Growth and characterization of InAs-GaSb photoconductors for long wavelength infrared range
11. High-temperature continuous-wave operation of λ = 8 μ m quantum cascade lasers
12. Very long wavelength infrared type-II detectors operating at 80 K