Spreading-resistance temperature sensor on silicon-on-insulator

IEEE Electron Device Letters

Volumn 20, Issue 11, 1999, Pages 589-591

  Lai, P T ^a   Li, Bin ^a   Chan, C L ^a   Sin, Johnny K O ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; SILICON ON INSULATOR TECHNOLOGY;

TEMPERATURE SENSORS;

SILICON SENSORS;

EID: 0033221254     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.798053     Document Type: Article

References (7)

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3. P. T. Lai and B. Liu, "Monolithic integrated spreading-resistance silicon flow sensor," Sens. Actuators A, vol. 58, pp. 85-88, 1997.
4. G. G. E. Low, "Carrier concentration disturbances in semiconductors," in Proc. Phys. Soc. B, 1955, vol. 68, pp. 310-314.
5. P. T. Lai and B. Liu, "A two-dimensional flow sensor using integrated silicon spreading-resistance temperature detectors," Rev. Sci. Instrum., vol. 68, pp. 3785-3789, 1997.
6. P. T. Lai, B. Li, and C. L. Chan, "Spreading-resistance temperature sensor on SOI," in Proc. IEEE Hong Kong Electron Device Meeting, Hong Kong, Aug. 1998, pp. 148-151.
7. N. Arora, MOSFET Models for VLSI Circuit Simulation. New York: Springer-Verlag, 1993, p. 138.