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Volumn 1, Issue 2, 2002, Pages 1419-1422

Ultra-Low-Power Thermal Sensor with Silicon-On-Insulator (SOI) Structure for High-Temperature Applications

Author keywords

High temperature sensor; SOT; Thermal resistor

Indexed keywords

FABRICATION; HIGH TEMPERATURE APPLICATIONS; MATHEMATICAL MODELS; RESISTORS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THICK FILMS; THIN FILMS;

EID: 1542348528     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (21)
  • 1
    • 0038011197 scopus 로고
    • Carrier concentration disturbances in semiconductors
    • G. G. E. Low, "Carrier concentration disturbances in semiconductors", Proc. Phys. Soc. B, vol. 68, pp. 310-314, 1955.
    • (1955) Proc. Phys. Soc. B , vol.68 , pp. 310-314
    • Low, G.G.E.1
  • 2
    • 0003620672 scopus 로고
    • Silizium-Temperature - Sensoren von -50 °C bis +350°C
    • G. Raabe, "Silizium-Temperature - Sensoren von -50 °C bis +350°C," NTG-Fachberichte, vol. 79, pp. 248-253, 1982.
    • (1982) NTG-Fachberichte , vol.79 , pp. 248-253
    • Raabe, G.1
  • 3
    • 0038011196 scopus 로고
    • Spreading resistance sensors for high temperature application
    • Vorbs England
    • H. Sauermann, "Spreading resistance sensors for high temperature application", Transducer Tempcon Conference 84-Harrogate, Vorbs England, vol. 27-29, pp. 679-689, 1984.
    • (1984) Transducer Tempcon Conference 84-Harrogate , vol.27-29 , pp. 679-689
    • Sauermann, H.1
  • 4
    • 0027647501 scopus 로고
    • Minority carrier accumulation at high-low junction
    • S. R. in't Hout, "Minority carrier accumulation at high-low junction", Solid-State Electron., vol. 36, pp. 1135-1142, 1993.
    • (1993) Solid-State Electron. , vol.36 , pp. 1135-1142
    • In't Hout, S.R.1
  • 5
    • 0030653835 scopus 로고    scopus 로고
    • Monolithic integrated spreading-resistance silicon flow sensor
    • P. T. Lai and B. Y. Liu, "Monolithic integrated spreading-resistance silicon flow sensor", Sensors and Actuators A, vol. 58, pp. 85-88, 1997.
    • (1997) Sensors and Actuators A , vol.58 , pp. 85-88
    • Lai, P.T.1    Liu, B.Y.2
  • 6
    • 0031256104 scopus 로고    scopus 로고
    • A two-dimensional flow sensor using integrated silicon spreading-resistance temperature sensors
    • B. Y. Liu, P. T. Lai, X. R. Zheng, B. Li, S. H. Zhang, and Z. H. Wu, "A two-dimensional flow sensor using integrated silicon spreading-resistance temperature sensors", Rev. of Scientific Instruments, vol. 68, no. 10, pp. 3785-3789, 1997.
    • (1997) Rev. of Scientific Instruments , vol.68 , Issue.10 , pp. 3785-3789
    • Liu, B.Y.1    Lai, P.T.2    Zheng, X.R.3    Li, B.4    Zhang, S.H.5    Wu, Z.H.6
  • 7
    • 0033221254 scopus 로고    scopus 로고
    • Spreading-resistance temperature sensor on silicon-oninsulator
    • P. T. Lai, Bin Li, C. L. Chan and J. K. O. Sin, "Spreading-resistance temperature sensor on silicon-oninsulator", IEEE Electron Device Letters, vol. 20, no. 11, pp. 589-591, 1999.
    • (1999) IEEE Electron Device Letters , vol.20 , Issue.11 , pp. 589-591
    • Lai, P.T.1    Li, B.2    Chan, C.L.3    Sin, J.K.O.4
  • 10
    • 0037673326 scopus 로고
    • Effect of the resistance of the bulk of a semiconductor on the form of the current-voltage characteristic of a diode
    • V. I. Stafeev, "Effect of the resistance of the bulk of a semiconductor on the form of the current-voltage characteristic of a diode", Sov. Phys. Tech. Phys., vol. 3, pp. 1502-1512, 1985.
    • (1985) Sov. Phys. Tech. Phys. , vol.3 , pp. 1502-1512
    • Stafeev, V.I.1
  • 11
    • 0037673329 scopus 로고
    • Minority-carrier injection into semiconductors
    • J. -C. Manifacier and H. K. Henisch, "Minority-carrier injection into semiconductors", Phys. Rev. B, vol. 17, pp. 2640-2647, 1978.
    • (1978) Phys. Rev. B , vol.17 , pp. 2640-2647
    • Manifacier, J.-C.1    Henisch, H.K.2
  • 13
    • 0019633313 scopus 로고
    • Minority-carrier extraction and accumulation near metal-semiconductor interfaces
    • S. Rahimi, J. -C. Manifacier and H. K. Henisch, "Minority-carrier extraction and accumulation near metal-semiconductor interfaces", J. Appl. Phys., vol. 2, pp. 6723-6728, 1981.
    • (1981) J. Appl. Phys. , vol.2 , pp. 6723-6728
    • Rahimi, S.1    Manifacier, J.-C.2    Henisch, H.K.3
  • 14
    • 0021466288 scopus 로고
    • Current-controlled non-equilibrium processes in semiconductors
    • J. -C. Manifacier, Y. Moreau and H. K. Henisch, "Current-controlled non-equilibrium processes in semiconductors", J. Appl. Phys., vol. 56, pp. 357-361, 1984.
    • (1984) J. Appl. Phys. , vol.56 , pp. 357-361
    • Manifacier, J.-C.1    Moreau, Y.2    Henisch, H.K.3
  • 15
    • 0027647501 scopus 로고
    • Minority carrier accumulation at high-low junction
    • S. R. in't Hout, "Minority carrier accumulation at high-low junction", Solid-State Electron., vol. 36, pp. 1135-1142, 1993.
    • (1993) Solid-State Electron. , vol.36 , pp. 1135-1142
    • In't Hout, S.R.1
  • 17
    • 0029255981 scopus 로고
    • An AC conductance technique for measuring self-heating in SOI MOSFET's
    • R. H. Tu, C. W, J. C. King, P. K. Ko and C. M. Hu, "An AC conductance technique for measuring self-heating in SOI MOSFET's", IEEE Electron Device Letters, vol. 16, no. 2, pp. 67-69, 1995.
    • (1995) IEEE Electron Device Letters , vol.16 , Issue.2 , pp. 67-69
    • Tu, R.H.1    King, J.C.2    Ko, P.K.3    Hu, C.M.4
  • 18
    • 0024680209 scopus 로고
    • Physical origin of negative differential resistance in SOI transistors
    • L. J. MCDAID, S. Hall, P. H. Mellor, W. Eccleston, and J. C. Alderman, "Physical origin of negative differential resistance in SOI transistors", Electronic Letters, vol. 25, no. 13, pp. 827-828, 1989.
    • (1989) Electronic Letters , vol.25 , Issue.13 , pp. 827-828
    • McDaid, L.J.1    Hall, S.2    Mellor, P.H.3    Eccleston, W.4    Alderman, J.C.5
  • 21
    • 0027554870 scopus 로고
    • Linear dynamic self-heating in SOI MOSFET's
    • A. L. Caviglia, A. A. Iliadis, "Linear dynamic self-heating in SOI MOSFET's", IEEE Electron Device Letters, vol. 14, no. 3, pp. 133-135, 1993.
    • (1993) IEEE Electron Device Letters , vol.14 , Issue.3 , pp. 133-135
    • Caviglia, A.L.1    Iliadis, A.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.