Electrical properties of Pr-doped Bi4Ti3O 12 thin films on Si substrate

Journal of Crystal Growth

Volumn 271, Issue 1-2, 2004, Pages 171-175

  Yang, Ch H ^a   Wang, Zh ^a   Jiang, F Y ^a,b   Geng, Y L ^a   Zhu, B Y ^a   Yi, X J ^a   Ma, G P ^a   Han, J R ^a  

^a SHANDONG UNIVERSITY   (China)

^b YANTAI UNIVERSITY   (China)

Author keywords

A3. Metalorganic decomposition; B1. Bismuth titanate; B2. Ferroelectric materials

Indexed keywords

BISMUTH COMPOUNDS; DECOMPOSITION; DENSITY (SPECIFIC GRAVITY); ELECTRIC INSULATING MATERIALS; FERROELECTRIC MATERIALS; FILM GROWTH; ORGANOMETALLICS; PEROVSKITE; POSITIVE IONS; SILICON; SUBSTRATES;

BIVALENT IONS; MEMORY EFFECTS; METALORGANIC DECOMPOSITION; SURFACE STATE DENSITY;

THIN FILMS;

EID: 4944227259     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.049     Document Type: Article

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