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Volumn 18, Issue 16, 2004, Pages 2247-2256

Tunneling magnetoresistance in ferromagnetic semiconductor tunnel junctions

Author keywords

Diluted ferromagnetic semiconductor; Spin polarized transport; Tunneling magnetoresistance

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; MANGANESE;

EID: 4944226042     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S021797920402607X     Document Type: Article
Times cited : (3)

References (25)
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  • 2
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    • H. Ohno, Science 281, 951 (1998); J. Magn. Magn. Mater. 200, 110 (1999).
    • (1999) J. Magn. Magn. Mater. , vol.200 , pp. 110
  • 5
    • 0035508995 scopus 로고    scopus 로고
    • J, König, H.-H. Lin and A. H. MacDonald, Phys. Rev. Lett. 84, 5628 (2000); J. König, T. Jungwirth and A. H. MacDonald, Phys. Rev. B64, 184423 (2001).
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    • König, J.1    Jungwirth, T.2    MacDonald, A.H.3
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  • 21
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    • J. Szczytko, W. Mac and A. Twardowski, Phys. Rev. B59, 12935 (1999); A. Van Esch, L. Van Bockstal, J. De Boeck, G. Verbanck, A. S. Van Steenbergen, P. J. Wellmann, B. Grietens, R. Bogaerts, F. Heriach and G. Borghs, ibid. B56, 13103 (1997).
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    • Szczytko, J.1    Mac, W.2    Twardowski, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.