Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 619-625

  Fujikura, H ^a   Hasegawa, H ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

(311)A (411)A facets; Cathodoluminescnece (CL); InGaAs InAlAs; Molecular beam epitaxy (MBE); Patterned InP substrate; Photoluminescence (PL); Ridge quantum wire; Scanning electron microscopy (SEM); Selective growth

Indexed keywords

EID: 0007182476     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666513     Document Type: Article

References (10)

1. R. Bhat, E. Kapon, D.M. Hwang, M.A. Koza and C.P. Yun, J. Cryst. Growth 93, 850 (1988).
2. R. Nötzel, J. Temmyo, H. Kamada and T. Fukura, Appl. Phys. Lett. 65, 457 (1994).
3. M. Walther, E. Kapon, J. Christen, D.M. Hwang and R. Bhat, Appl. Phys. Lett. 60, 521 (1992).
4. S. Tukamoto, Y. Nagamune, M. Nishioka and Y. Arakawa, J. Appl. Phys. 71, 533 (1992).
5. S. Koshiba, H. Noge, H. Akiyama, T. Inoshita, Y. Nakamura, A. Shimizu, Y. Nagamune, M. Tsuchiya, H. Kano, H. Sakaki and K. Wada, J. Appl. Phys. 64, 363 (1994).
6. H. Fujikura, H. Tomozawa, M. Akazawa and H. Hasegawa, Appl. Surf. Sci. 60/61, 702 (1992).
7. H. Fujikura, T. Iwa-ana and H. Hasegawa, Jpn. J. Appl. Phys. 33, 919 (1994).
8. H. Fujikura and H. Hasegawa, accepted for publication in J. Cryst. Growth (1995).
9. S. Shimomura, A. Wakejima, A. Adachi, Y. Okamoto, N. Sano, K. Murase and S. Hiyamizu, Jpn. J. Appl. Phys. 32, L1728 (1993).
10. H.P. Meier, E. Van Gieson, P.W. Epperlein, C. Harder and W. Walter, J. Cryst. Growth 95, 66 (1989).