CMOS dual-work-function engineering by using implanted Ni-FUSI

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 831-833

  Lin, Chien Ting ^a   Ramin, Manfred ^c   Pas, Michael ^c   Wise, Rick ^c   Fang, Yean Kuen ^b   Hsu, Che Hua ^a   Huang, Yao Tsung ^a   Cheng, Li Wei ^a   Ma, Mike ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

CMOS; Dual implant; Fully silicided (FUSI); Work function

Indexed keywords

BAND EDGES; CMOS; CMOS PROCESS; DUAL IMPLANT; FULLY COMPATIBLE; FULLY SILICIDED (FUSI); THERMAL BUDGETS; TUNING ELEMENTS;

GALLIUM; SILICIDES; YTTERBIUM;

WORK FUNCTION;

EID: 49349103373     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.903929     Document Type: Article

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