Advanced dual metal gate MOSFETs with high-k dielectric for CMOS application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 11-12

  Hsu, P F ^a   Hou, Y T ^a   Yen, F Y ^a   Chang, V S ^a   Lim, P S ^a   Hung, C L ^a   Yao, L G ^a   Jiang, J C ^a   Lin, H J ^a   Chiou, J M ^a   Yin, K M ^a   Lee, J J ^a   Hwang, R L ^a   Jin, Y ^a   Chang, S M ^a   Tao, H J ^a   Chen, S C ^a   Liang, M S ^a   Ma, T P ^b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; HIGH TEMPERATURE APPLICATIONS; MOSFET DEVICES;

CURRENT DRIVABILITY; DUAL METAL GATE ELECTRODES; SHORT CHANNEL EFFECTS;

GATE DIELECTRICS;

EID: 41149117568     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Z.B. Zhang et al. Symp, VLSI Tech., p.50 (2005)
2. Y.T. Hou et al, IEDM Tech Dig., p. 72 (2005)
3. K. Henson et al., IEDM Tech Dig., p. 851 (2004)