Modeling of anomalous frequency and bias dependences of effective gate resistance in RF CMOS

IEEE Transactions on Electron Devices

Volumn 53, Issue 10, 2006, Pages 2620-2626

  Cui, Yan ^a   Niu, Guofu ^a   Taylor, Stewart S ^b  

^a AUBURN UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

CMOS modeling; Gate resistance

Indexed keywords

ACCURATE MODELING; BIAS DEPENDENCES; CHANNEL RESISTANCES; CMOS MODELING; FRINGING CAPACITANCES; GATE RESISTANCE; NON-QUASI-STATIC EFFECTS; OVERLAP CAPACITANCES; PARASITIC CAPACITANCES; REAL PARTS; RF-CMOS; SOURCE INVERSIONS; Y-PARAMETERS;

CAPACITANCE;

EID: 49249138290     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882398     Document Type: Article

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