Characterization of Ti schottky diodes on epi-regrown 4H-SiC

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 754-757

  Zhu, Lin ^a   Canhua, L I ^a   Chow, T Paul ^a   Bhat, Ishwara B ^a   Jones, Kenneth A ^b   Scozzie, C ^b   Agarwal, Anant ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; Rectifier; Regrown; Schottky

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; LEAKAGE CURRENTS; SILICON CARBIDE; TITANIUM;

4H-SIC; EPI-REGROWTH PROCESS; REGROWN; SCHOTTKY;

SCHOTTKY BARRIER DIODES;

EID: 33646725743     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0134-9     Document Type: Conference Paper

References (8)

1. N. Nordell, A. Schoner, and S.G. Andersson, J. Electrochem. Soc. 143, 2910 (1996).
2. R. Rupp, P. Laning, J. Volkl, and D. Stephani, J. Cryst. Growth 146, 37 (1995).
3. M.V. Rao, P. Griffiths, O.W. Holland, G. Keiner, J.A. Freitas, Jr., D.S. Simons, P.H. Chi, and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).
4. H. Mitlehner, W. Bartsch, K.O. Dohnke, P. Friedrichs, R. Kaltschmidt, U. Weinert, B. Weis, and D. Stephani, International Symposium on Power Semiconductor Devices and ICs 1997 (Piscataway, NJ: IEEE, 1997), pp. 339-342.
5. L. Zhu, C. Li, T.P. Chow, I.B. Bhat, K.A. Jones, C. Scozzie, and A. Agarwal, International Symposium on Power Semiconductor Devices and ICs 2005 (Piscataway, NJ: IEEE, 2005), pp. 283-286.
6. D.K. Schroder, Semiconductor Material and Device Characterization (New York: John Wiley & Sons, 1998).
7. J. Crofton and S. Sriram, IEEE Trans. Electron Devices 43, 2305 (1996).
8. B. J. Baliga, Power Semiconductor Devices (Boston, MA: PWS Publishing Co., 1996).