CCD charge injection structure at very small signal levels

IEEE Transactions on Electron Devices

Volumn 55, Issue 8, 2008, Pages 2111-2120

  Prigozhin, Gregory ^a   Burke, Barry ^b   Bautz, Marshall ^a   Kissel, Steve ^a   LaMarr, Beverly ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Active pixel sensor (APS); Charge injection; Charge coupled device CCD); kTC noise; X ray

Indexed keywords

CAPACITANCE; CHARGE COUPLED DEVICES; DIGITAL CAMERAS; NONMETALS; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON CARBIDE;

ACTIVE PIXEL SENSOR (APS); CHARGE INJECTION NOISE; CHARGE PACKETS; CHARGE-COUPLED DEVICE CCD); FRAME-TRANSFER; FUNCTION OF TIME; INTERNAL CAPACITANCE; KTC NOISE; OVER-POTENTIAL; RADIATION DAMAGE EFFECTS; SIGNAL CHARGE; SILICON CARBIDE DEVICES; SMALL SIGNALS; X-RAY; X-RAY DETECTIONS;

CHARGE INJECTION;

EID: 49249124590     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.926732     Document Type: Article

References (16)

1. G. Prigozhin, S. Kissel, M. Bautz, C. Grant, B. LaMarr, R. Foster, and G. Ricker, "Characterization of the radiation damage in the Chandra X-ray CCDs," in Proc. SPIE - X-ray and Gamma-Ray Instrumentation for Astronomy XI, 2000, vol. 4140, pp. 123-134.
2. B. Burke, J. Gregory, M. Bautz, G. Prigozhin, S. Kissel, B. Kosicki, A. Loomis, and D. Young, "Soft X-ray CCD imagers for AXAF," IEEE Trans. Electron Devices, vol. 44, no. 10, pp. 1633-1642, Oct. 1997.
3. M. Tompsett, "Surface potential equilibration method of setting charge in charge-coupled devices," IEEE Trans. Electron Devices, vol. ED-22, no. 6, pp. 305-309, Jun. 1975.
4. S. Emmons and D. Buss, "Noise measurements on the floating diffusion input for charge-coupled devices," J. Appl. Phys., vol. 45, no. 12, pp. 5303-5306, Dec. 1974.
5. R. Brodersen and S. Emmons, "Noise in buried channel charge-coupled devices," IEEE J. Solid State Circuits, vol. SSC-11, no. 1, pp. 147-155, Feb. 1976.
6. D. Smith, A. Holland, I. Hutchinson, A. Abbey, P. Pool, D. Burt, and D. Morris, "Low noise charge injection in the CCD22," in Proc. SPIE - High Energy Detectors in Astronomy, 2004, vol. 5501, pp. 189-196.
7. G. Prigozhin, B. Burke, M. Bautz, S. Kissel, B. LaMarr, and M. Freytsis, "X-ray CCD with charge injection structure," in Proc. SPIE - High Energy Detectors in Astronomy, 2004, vol. 5501, pp. 357-365.
8. B. Kern, "Charge injection noise in CCDs," IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2478-2484, Oct. 2006.
9. B. Pain, G. Yang, M. Ortiz, C. Wrigley, B. Hancock, and T. Cuningham, "Analysis and enhancement of low-light-level performance of photodiode-type CMOS active pixel imagers operated with subthreshold reset," in Proc. IEEE Workshop Charge Coupled Devices Adv. Image Sens., Nagano, Japan, Jun. 1999, pp. 140-143.
10. E. Fossum, "Charge transfer noise and lag in CMOS active pixel sensors," in Proc. IEEE Workshop Charge Coupled Devices Adv. Image Sens., Bavaria, Germany, May 2003.
11. M. Bautz, S. Kissel, B. LaMarr, G. Prigozhin, B. Burke, and J. Gregory, "Progress in X-ray CCD sensor performance for the Astro-E2 X-ray imaging spectrometer," in Proc. SPIE - High Energy Detectors in Astronomy, 2004, vol. 5501, pp. 111-122.
12. W. Kosonocky, "Introducing signal at low noise level to charge-coupled circuit," U.S. Patent 3 986 198, Oct. 12, 1976.
13. W. Press, B. Flannery, S. Teukolsky, and W. Vetterling, Numerical Recipes in C: The Art of Scientific Computing. Cambridge, U.K.: Cambridge Univ., 1990.
14. N. Teranishi, A. Kohno, Y. Ishihara, E. Oda, and K. Arai, "An interline CCD image sensor with reduced image lag," IEEE Trans. Electron Devices, vol. ED-31, no. 12, pp. 1829-1833, Dec. 1984.
15. S. Kawai, N. Mutoh, and N. Teranishi, "Thermionic-emission-based barrier height analysis for precise estimation of charge handling capacity in CCD registers," IEEE Trans. Electron Devices, vol. 44, no. 10, pp. 1588-1592, Oct. 1997.
16. H. Tian, B. Fowler, and A. Gamal, "Analysis of temporal noise in CMOS photodiode active pixel sensor," IEEE J. Solid State Circuits, vol. 36, no. 1, pp. 92-101, Jan. 2001.