Charge-injection noise in CCDs

IEEE Transactions on Electron Devices

Volumn 53, Issue 10, 2006, Pages 2478-2484

  Kern, Brian ^a,b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Charge coupled devices (CCDs); Diffusion processes; MOSFETs; Shot noise

Indexed keywords

CHARGE PACKETS; CHARGE-COUPLED DEVICES (CCDS); CHARGE-INJECTION; DIFFUSION CURRENTS; DIFFUSION PROCESSES; ELECTRONIC CHARGES; MOSFETS; POISSONIAN; SMALL CHARGES;

CAPACITANCE; DIFFUSION; MOSFET DEVICES; SHOT NOISE;

CHARGE COUPLED DEVICES;

EID: 48349104691     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882271     Document Type: Article

References (26)

1. J. R. Janesick, Scientific Charge-Coupled Devices. Bellingham, WA: SPIE, 2001.
2. J. A. Mendenhall and D. N. Burrows, "CCD sounding rocket observation of the high-latitude soft X-ray background," Astrophys. J., vol. 563, no. 2, pp. 716-723, Dec. 2001.
3. B. E. Burke, R. W. Mountain, P. J. Daniels, M. J. Cooper, and V. S. Dolat, "CCD soft X-ray imaging spectrometer for the ASCA satellite," IEEE Trans. Nucl. Sci., vol. 41, no. 1, pp. 375-385, Feb. 1994.
4. H. Soltau et al., "Performance of the pn-CCD X-ray detector system designed for the XMM satellite mission," Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol. 377, no. 2, pp. 340-345, Aug. 1996.
5. B. E. Burke, J. A. Gregory, M. W. Bautz, G. Y. Prigozhin, S. E. Kissel, B. B. Kosicki, A. H. Loomis, and D. J. Young, "Soft-X-ray CCD imagers for AXAF," IEEE Trans. Electron Devices, vol. 44, no. 10, pp. 1633-1642, Oct. 1997.
6. R. Vanderspek, J. Villaseñor, J. Doty, J. G. Jernigan, A. Levine, G. Monnelly, and G. R. Ricker, "GRB observations with the HETE soft X-ray cameras," Astron. Astrophys. Suppl. Ser., vol. 138, no. 3, pp. 565-566, Sep. 1999.
7. D. N. Burrows et al., "The Swift X-ray telescope," Proc. SPIE vol. 5165, pp. 201-216, 2004.
8. H. Matsumoto et al., "X-ray imaging spectrometers (XIS) of Astro-E2," Nucl. Instrum. Methods Phys. Res. A, Accel. Spectrom. Detect. Assoc. Equip., vol. 541, no. 1/2, pp. 357-364, Apr. 2005.
9. J. Janesick, T. Elliott, and F. Pool, "Radiation damage in scientific charge-coupled devices," IEEE Trans. Nucl. Sci., vol. 36, no. 1, pp. 572-578, Feb. 1989.
10. L. K. Townsley, P. S. Broos, G. P. Garmire, and J. A. Nousek, "Mitigating charge transfer inefficiency in the Chandra X-ray observatory advanced CCD imaging spectrometer," Astrophys. J., vol. 534, no. 2, pp. L139-L142, May 2000.
11. H. Tomida, H. Matsumoto, M. Ozaki, Y. Tazawa, H. Awaki, T. Tsuru, K. Koyama, H. Tsunemi, and K. Yamamoto, "Radiation damage on X-ray CCDs and restoration technique for space astronomy," Publ. Astron. Soc. Jpn., vol. 49, no. 3, pp. 405-412, 1997.
12. K. K. Thornber, "Noise suppression in charge transfer devices," Proc. IEEE, vol. 60, no. 9, pp. 1113-1114, Sep. 1972.
13. S. P. Emmons and D. D. Buss, "Noise measurements on the floating diffusion input for charge-coupled devices," J. Appl. Phys., vol. 45, no. 12, pp. 5303-5306, Dec. 1974.
14. A. M. Mohsen, M. F. Thompsett, and C. H. Sequin, "Noise measurements in charge-coupled devices," IEEE Trans. Electron Devices, vol. ED-22, no. 5, pp. 209-218, May 1975.
15. R. W. Brodersen and S. P. Emmons, "Noise in buried channel charge-coupled devices," IEEE J. Solid-State Circuits, vol. SSC-11, no. 1, pp. 147-155, Feb. 1976.
16. G. Prigozhin, B. Burke, M. Bautz, S. Kissel, B. LaMarr, and M. Freytsis, "X-ray CCD with charge injection structure," Proc. SPIE, vol. 5501, pp. 357-365, 2004.
17. H. Tian, B. Fowler, and A. El Gamal, "Analysis of temporal noise in CMOS photodiode active pixel sensor," IEEE J. Solid-State Circuits vol. 36, no. 1, pp. 92-101, Jan. 2001.
18. E. R. Fossum, "Charge transfer noise and lag in CMOS active pixel sensors," in Proc. IEEE Workshop Charge Coupled Devices and Adv. Image Sens., Schloss Elmau, Germany, 2003, pp. 1-6.
19. M. F. Thompsett, "Surface potential equilibration method of setting charge in charge-coupled devices," IEEE Trans. Electron Devices, vol. ED-22, no. 6, pp. 305-309, Jun. 1975.
20. R. F. Pierret, Semiconductor Fundamentals. Reading, MA: Addison-Wesley, 1988.
21. R. Sarpeshkar, T. Delbruck, and C. A. Mead, "White noise in MOS transistors and resistors," IEEE Circuits Devices Mag., vol. 9, no. 6, pp. 23-29, Nov. 1993.
22. A. van der Ziel, Noise in Solid State Devices and Circuits. Reading, MA: Wiley, 1986.
23. R. D. Thornton, Characteristics and Limitations of Transistors. New York: Wiley, 1966.
24. A. Demir, E. W. Y. Liu, and A. L. Sangiovanni-Vincentelli, "Time-domain non-Monte Carlo noise simulation for nonlinear dynamic circuits with arbitrary excitations," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 15, no. 5, pp. 493-505, May 1996.
25. S. Kawai, N. Mutoh, and N. Teranishi, "Thermionic-emission-based barrier height analysis for precise estimation of charge handling capacity in CCD registers," IEEE Trans. Electron Devices, vol. 44, no. 10, pp. 1588-1592, Oct. 1997.
26. G. Chen, "Diffusion-transmission interface condition for electron and phonon transport," Appl. Phys. Lett., vol. 82, no. 6, pp. 991-993, Feb. 2003.