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Volumn , Issue , 2007, Pages 333-340

Yield learning methodology in early technology development

Author keywords

Critical length; Early technology development; Grand pareto; Parametric yield model; SRAM stability; Systematic yield model; TPLY; Voltage contrast; Yield model; Yield step up plan

Indexed keywords

PROCESS CONTROL; STATIC RANDOM ACCESS STORAGE; SYSTEM STABILITY;

EID: 34748920934     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2007.375059     Document Type: Conference Paper
Times cited : (7)

References (11)
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  • 2
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  • 4
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    • and wherein referenced papers
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  • 5
    • 33947259838 scopus 로고    scopus 로고
    • High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
    • accepted by IEDM
    • S. Narasimha et al, "High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography", accepted by IEDM 2006.
    • (2006)
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  • 6
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  • 7
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  • 11
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    • The grand pareto: A methodology for identifying and quantifying yield detractors in a technology for volume semiconductor manufacturing
    • Z. Berndlmaier et al., "The grand pareto: a methodology for identifying and quantifying yield detractors in a technology for volume semiconductor manufacturing" Proceedings of Advanced Semiconductor Manufacturing Conference 2006, pp. 405-410.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.