Towards the integration of epitaxially grown KTN thin films in silicon technology

Ferroelectrics

Volumn 362, Issue 1, 2008, Pages 95-104

  Guiller, A ^a,b   Moussavou, A G ^a   Guilloux Viry, M ^a   Perrin, A ^a   Fompeyrine, J ^b   Sauleau, R ^a   Mahdjoubi, K ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIALLY GROWN; HIGH QUALITY; HIGH-CRYSTALLINE QUALITY; MATCHING LAYER; PYROCHLORE PHASE; SACRIFICIAL LAYER; SEED LAYER; SI SUBSTRATES; SILICON TECHNOLOGIES; UNDERLAYERS;

BUFFER LAYERS; COMPUTER CRIME; CRYSTAL GROWTH; DEPOSITION; EPITAXIAL FILMS; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDE MINERALS; PEROVSKITE; PULSED LASER DEPOSITION; PULSED LASERS; STRONTIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 49249092696     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190802006319     Document Type: Conference Paper

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