Comparison of interfaces for (Ba,Sr)TiO 3 films deposited on Si and SiO 2/Si substrates

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2672-2675

  Suvorova, N A ^a   Lopez, C M ^a   Irene, E A ^a   Suvorova, A A ^b   Saunders, M ^b  

^a University of North Carolina at Chapel Hill   (United States)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE MEASUREMENTS;

ANNEALING; CAPACITANCE; CAPACITORS; ELECTRIC CONDUCTANCE; ELLIPSOMETRY; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); METALLIZING; OXIDATION; PERMITTIVITY; SILICA; SPUTTER DEPOSITION; TITANIUM COMPOUNDS; VOLTAGE MEASUREMENT;

THIN FILMS;

EID: 1642303131     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645647     Document Type: Article

References (11)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. A. H. Mueller, N. A. Suvorova, E. A. Irene, O. Auciello, and J. A. Schultz, Appl. Phys. Lett. 80, 3796 (2002).
3. A. H. Mueller, N. A. Suvorova, E. A. Irene, O. Aueiello, and J. A. Schultz, J. Appl. Phys. 93, 3866 (2003).
4. L. R. Doolittle, Nucl. Instrum. Methods Phys. Res. B 9, 344 (1985).
5. Y. Wang and E. A. Irene, J. Vac. Sci. Technol. B 18, 279 (1999).
6. F. H. Baumann, C.-P. Chang, J. L. Grazul, A. Kamgar, C. T. Liu, and D. A. Muller, Mater. Res. Soc. Symp. Proc. 611, C4.1.1-C4.1.12 (2000).
7. N. I. Borgardt, B. Plikat, M. Seibt, and W. Schroter, Ultramicroscopy 90, 241 (2002).
8. E. A. Irene, Solid-State Electron. 45, 1207 (2001).
9. G. Kothleitner and F. Hofer, Micron 29, 349 (1998).
10. O. L. Krivanek, M. K. Kundmann, and K. Kimoto, J. Microsc. 180, 277 (1995).
11. E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).