Local determination of the stacking sequence of layered materials

Applied Physics Letters

Volumn 72, Issue 14, 1998, Pages 1697-1699

  Fompeyrine, J ^a   Berger, R ^a   Lang, H P ^a   Perret, J ^a   Machler E ^a   Gerber, Ch ^a   Locquet, J P ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000464098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121155     Document Type: Article

References (39)

1. J. G. Bednorz and K. A. Müller, Z. Phys. B 64, 189 (1986).
2. K. Chahara, T. Ohono, M. Kasai, and Y. Kozono, Appl. Phys. Lett. 63, 1990 (1993);
3. R. von Helmholt, J. Wecker, B. Holzapfel, L. Schultz, and K. Samwer, Phys. Rev. Lett. 72, 2331 (1993).
4. C. A.-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995).
5. For a review, see for instance, J. N. Eckstein and I. Bozovic, Annu. Rev. Mater. Sci. 25, 679 (1995).
6. T. Terashima, K. Shimura, Y. Bando, Y. Matsuda, A. Fujiyama, and S. Komiyama, Phys. Rev. Lett. 67, 1362 (1991).
7. Q. Li, C. Kwon, X. X. Xi, S. Bhattacharya, A. Walkenhorst, T. Venkatesan, S. J. Hagen, W. Jiang, and R. L. Greene, Phys. Rev. Lett. 69, 2713 (1992).
8. J.-M. Triscone, Ø. Fischer, O. Brunner, L. Antognazza, A. D. Kent, and M. G. Karkut, Phys. Rev. Lett. 64, 5176 (1990).
9. I. N. Chan, D. C. Vier, O. Nakamura, J. Hasen, J. Guimpel, S. Schultz, and I. K. Schuller, Phys. Lett. A 175, 241 (1993).
10. N. Chandrasekhar, V. S. Achutharaman, V. Agrawal, and A. M. Goldman, Phys. Rev. B 46, 8565 (1992).
11. Similar stacks were suggested in V. C. Matijasevic, B. Ilge, B. Stäuble-Pümpin, G. Rietveld, F. Tuinstra, and J. E. Mooij, Phys. Rev. Lett. 76, 4765 (1996);
12. T. Haage, Q. D. Jiang, M. Cardona, H.-U. Habermeier, and J. Zegenhagen, Appl. Phys. Lett. 68, 2427 (1996).
13. J. G. Wen, C. Traeholt, and H. W. Zandbergen, Physica C 205, 354 (1993).
14. K. Shimura, Y. Daitoh, Y. Yano, T. Terashima, Y. Bando, Y. Matsuda, and S. Komiyama, Physica C 228, 91 (1994).
15. S. J. Pennycook, M. F. Chrisholm, D. E. Jesson, D. P. Norton, D. H. Lowndes, R. Feenstra, H. R. Kerchner, and J. O. Thomson, Phys. Rev. Lett. 67, 765 (1991).
16. H. L. Edwards, J. T. Markert, and A. L. de Lozanne, Phys. Rev. Lett. 69, 2967 (1992).
17. S. Tanaka, T. Nakamura, M. Iijama, N. Yoshida, S. Takano, F. Shoji, and K. Oura, Appl. Phys. Lett. 59, 3637 (1991).
18. J.-P. Locquet and E. Mächler, Mater. Res. Bull. 19, 39 (1994).
19. T. Hikita, T. Hanada, M. Kudo, and M. Kawai, J. Vac. Sci. Technol. A 11, 2649 (1993).
20. M. Yoshimoto, T. Maeda, K. Shimozono, H. Koinuma, M. Shinohara, O. Ishiyama, and F. Ohtani, Appl. Phys. Lett. 65, 3197 (1994).
21. T. Nakamura, H. Inada, and M. Iiyama, Jpn. J. Appl. Phys., Part 1 36, 90 (1997).
22. 4-HF preferentially removes SrO, although this process is not 100% selective as reported by P. A. Bertrand and P. D. Fleischauer, Thin Solid Films 103, 167 (1983);
23. K. S. Young and Y. W. Lam, Thin Solid Films 109, 169 (1983).
24. ESCETE, Single Crystal Technology, B. V., NL-7547 RD Enschede, The Netherlands. The etching process used is similar to that in Ref. 20.
25. The SFM analysis was performed with a Nanoscope III system from Digital Instruments (Santa Barbara, CA) in contact, friction, and tapping mode. The scan unit was placed in an argon-filled bag, which was attached to the annealing chamber and sealed against the ambient. Cantilevers were changed in situ, and their geometry was analyzed later by means of scanning electron microscopy to calculate the cantilever spring constants. For details see E. Meyer, R. Lüthi, L. Howald, M. Bammerlin, M. Guggisberg, and H.-J. Güntherodt, in Micro/Nanotribology and Its Applications, NATO ASI Series E: Appl. Sci., edited by B. Bhusan (Kluwer, Dordrecht, 1997), Vol. 330, pp. 193-215. Contact and tapping modes revealed similar topography images, but only contact-mode results are presented here. For this mode we used Si sensors (Nanosensors, Aidlingen, Germany) with a spring constant of 0.26 N/m and a torsional spring constant of 106 N/m.
26. S. M. Paik, S. Kim, and I. K. Schuller, Phys. Rev. B 44, 3272 (1991).
27. B. Stäuble-Pümpin, B. Ilge, V. C. Matijasevic, P. M. L. O. Scholte, A. J. Steinfort, and F. Tuinstra, Surf. Sci. 369, 313 (1996);
28. R. Sum, H. P. Lang, and H.-J. Güntherodt, Physica C 242, 174 (1995).
29. Friction contrast was observed between a substrate and a deposit, see for instance L. Howald, E. Meyer, R. Lüthi, H. Haefke, R. Overney, H. Rudin, and H.-J. Güntherodt, J. Vac. Sci. Technol. B 12, 2227 (1994);
30. J. Tamayo, R. García, T. Utzmeier, and F. Briones, Phys. Rev. B 55, R13436 (1997);
31. B. Bhushan, J. N. Israelachvili, and U. Landman, Nature (London) 359, 133 (1995).
32. V. E. Henrich, G. Dresselhaus, and H. J. Ziegler, Phys. Rev. B 17, 4908 (1978);
33. B. Cord and R. Courths, Surf. Sci. 162, 34 (1985);
34. T. Matsumoto, H. Tanaka, T. Kawai, and S. Kawai, Surf. Sci. Lett. 278, L153 (1992).
35. Q. D. Jiang and J. Zegenhagen, Surf. Sci. 367, L42 (1996);
36. H. Bando, Y. Aiura, Y. Haruyama, T. Shimizu, and Y. Nishihara, J. Vac. Sci. Technol. B 13, 1150 (1995).
37. T. Nishihara, O. Ishiyama, S. Hayashi, M. Shinohara, M. Yoshimoto, T. Ohnishi, and H. Koinuma, in Proceedings of MRS Spring Meeting, Symposium on Epitaxial Oxide Thin Films, Vol. 474 (Materials Research Society, Warrendale, PA, 1997), contrary to Ref. 26, these authors also suggest an increased Ti desorption, possibly due to ignoring ordered oxygen vacancies in their data deconvolution.
38. S. Suzuki, H. Ohsaki, and E. Ando, Jpn. J. Appl. Phys., Part 1 35, 1862 (1996).
39. J. Jorgensen, M. A. Beno, D. G. Hinks, L. Soderholm, K. J. Volin, R. L. Hitterman, J. D. Grace, I. K. Schuller, C. U. Segre, and K. Zhang, Phys. Rev. B 36, 3608 (1987).