Effect of aluminum doping on the high-temperature stability and piezoresistive response of indium tin oxide strain sensors

Thin Solid Films

Volumn 476, Issue 2, 2005, Pages 344-351

  Gregory, Otto J ^a   You, Tao ^a   Crisman, Everett E ^a  

^a The University of Rhode Island   (United States)

Author keywords

Aluminum; Indium tin oxide; Strain sensors

Indexed keywords

ALUMINUM; BINDING ENERGY; DOPING (ADDITIVES); HIGH TEMPERATURE EFFECTS; INDIUM; SCANNING ELECTRON MICROSCOPY; SPUTTERING; THERMAL EFFECTS;

ELECTRICAL STABILITY; INDIUM TIN OXIDE (ITO); STRAIN SENSORS; TIN OXIDE;

SENSORS;

EID: 13844271304     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.10.045     Document Type: Article

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