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Volumn 16, Issue 5, 2008, Pages 379-387

Formation of boron-doped region using spin-on dopant: Investigation on the impact of metallic impurities

Author keywords

Boron diffusion; Fe; N type silicon; Spin on dopant

Indexed keywords

BORON COMPOUNDS; ELECTRIC PROPERTIES; NONMETALS;

EID: 49149108142     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.818     Document Type: Article
Times cited : (19)

References (23)
  • 9
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    • A fast preparation-free method to detect iron in silicon
    • Zoth G, Bergholtz W. A fast preparation-free method to detect iron in silicon. Journal of Applied Physics 1990; 67: 6764-6771.
    • (1990) Journal of Applied Physics , vol.67 , pp. 6764-6771
    • Zoth, G.1    Bergholtz, W.2
  • 10
    • 1142304524 scopus 로고    scopus 로고
    • Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping
    • Macdonald D, Geerligs LJ, Azzizi A. Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping. Journal of Applied Physics 2004; 95: 1021-1028.
    • (2004) Journal of Applied Physics , vol.95 , pp. 1021-1028
    • Macdonald, D.1    Geerligs, L.J.2    Azzizi, A.3
  • 11
    • 11044226981 scopus 로고    scopus 로고
    • Dynamics of light-induced FeB dissociation in crystalline silicon
    • Geerligs LJ, Macdonald D. Dynamics of light-induced FeB dissociation in crystalline silicon. Applied Physics Letters 2004; 85: 5227-5229.
    • (2004) Applied Physics Letters , vol.85 , pp. 5227-5229
    • Geerligs, L.J.1    Macdonald, D.2
  • 13
    • 0345767385 scopus 로고    scopus 로고
    • Measuring and interpreting the lifetime of silicon wafers
    • Cuevas A, Macdonald D. Measuring and interpreting the lifetime of silicon wafers. Solar Energy 2004; 76: 255-262.
    • (2004) Solar Energy , vol.76 , pp. 255-262
    • Cuevas, A.1    Macdonald, D.2
  • 14
    • 10044269932 scopus 로고    scopus 로고
    • Recombination activity of interstitial iron and other transition metal point defects in P- and N-type crystalline silicon
    • Macdonald D, Geerlings LJ. Recombination activity of interstitial iron and other transition metal point defects in P- and N-type crystalline silicon. Applied Physics Letter 2004; 85: 4061-4063.
    • (2004) Applied Physics Letter , vol.85 , pp. 4061-4063
    • Macdonald, D.1    Geerlings, L.J.2
  • 16
    • 33746808095 scopus 로고    scopus 로고
    • Impact of iron contamination on the performance of the single-crystalline silicon solar cells: Computed and experimental results
    • Dubois S, Palais O, Pasquinelli M, Martinuzzi S, Jaussaud C. Impact of iron contamination on the performance of the single-crystalline silicon solar cells: computed and experimental results. Journal of Applied Physics 2006; 100: 024510.
    • (2006) Journal of Applied Physics , vol.100 , pp. 024510
    • Dubois, S.1    Palais, O.2    Pasquinelli, M.3    Martinuzzi, S.4    Jaussaud, C.5
  • 17
    • 33846118793 scopus 로고    scopus 로고
    • Influence of substitutional metallic impurities on the performances of p-type crystalline silicon solar cells: The case of gold
    • Dubois S, Palais O, Pasquinelli M, Martinuzzi S, Jaussaud C. Influence of substitutional metallic impurities on the performances of p-type crystalline silicon solar cells: the case of gold. Journal of Applied Physics 2006; 100: 123502.
    • (2006) Journal of Applied Physics , vol.100 , pp. 123502
    • Dubois, S.1    Palais, O.2    Pasquinelli, M.3    Martinuzzi, S.4    Jaussaud, C.5
  • 21
    • 0001363416 scopus 로고
    • A fast, preparation-free method to detect iron in silicon
    • Zoth G, Bergholz W. A fast, preparation-free method to detect iron in silicon. Journal of Applied Physics 1990; 67: 6764-6771.
    • (1990) Journal of Applied Physics , vol.67 , pp. 6764-6771
    • Zoth, G.1    Bergholz, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.