Impact of hot carrier degradation modes on I/O nMOSFETS aging prediction

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2006, Pages 63-67

  Guerin, C ^a   Huard, V ^b   Bravaix, A ^c   Denais, M ^a  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); MOSFET DEVICES; STRESS ANALYSIS; VOLTAGE MEASUREMENT;

AGING PREDICTION; CHARGE PUMPING (CP);

HOT CARRIERS;

EID: 34548730524     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2006.305212     Document Type: Conference Paper

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