175% tunnel magnetoresistance at room temperature and high thermal stability using Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Tezuka, N ^a,b   Ikeda, N ^a   Sugimoto, S ^a   Inomata, K ^b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; ELECTRODES; EPITAXIAL GROWTH; MAGNETORESISTANCE; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

MAGNETIC TUNNEL JUNCTIONS; TUNNEL MAGNETORESISTANCE (TMR) RATIO; TUNNELING SPIN POLARIZATION;

TUNNEL JUNCTIONS;

EID: 33845915157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2420793     Document Type: Article

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