HF caracterisation of sub-100nm UTB-FDSOI with Tin/HfO2 gate stack

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 145-148

  Lim, T C ^a   Rozeau, O ^b   Buj, C ^b   Paccaud, M ^b   Dambrine, G ^a   Danneville, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

FULLY DEPLETED SILICON-ON-INSULATOR; GATE STACKS; HIGH-FREQUENCY; INTERNATIONAL CONFERENCES; SUB-100 NM;

NONMETALS;

EID: 49049087567     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527160     Document Type: Conference Paper

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