Operating SOI CMOS technology in extreme environments

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

Volumn , Issue , 2003, Pages 37-40

  Li, Ying ^a   Niu, Guofu ^a   Cressler, J D ^b   Patel, J ^c   Liu, M ^d   Reed, R A ^e   Mojarradi, M M ^c   Blalock, B J ^f  

^a AUBURN UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d HONEYWELL TECHNOLOGY CENTER   (United States)

^e NASA GODDARD SPACE FLIGHT CENTER   (United States)

^f University of Tennessee   (United States)

Author keywords

CMOS technology; Cryogenics; Extraterrestrial measurements; Probes; Protons; Robustness; Space missions; Space technology; Temperature distribution; Threshold voltage

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYOGENICS; INTEGRATED CIRCUITS; PROBES; PROTONS; ROBUSTNESS (CONTROL SYSTEMS); TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE;

CMOS TECHNOLOGY; CRYOGENIC TEMPERATURES; ELECTRONICS APPLICATIONS; EXTRATERRESTRIAL MEASUREMENTS; PARTIALLY DEPLETED SOI CMOS; SPACE MISSIONS; SPACE TECHNOLOGIES; THRESHOLD VOLTAGE SHIFTS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 48949122740     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2003.1196663     Document Type: Conference Paper

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