The effects of electronic field on the atomic structure of the graphene/α-SiO2 interface

Nanotechnology

Volumn 19, Issue 27, 2008, Pages

  Ao, Z M ^a   Zheng, W T ^a   Jiang, Q ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS;

ATOMIC STRUCTURES; ELECTRONIC FIELD;

SILICON COMPOUNDS;

SILICON DIOXIDE;

ARTICLE; ATOM; COVALENT BOND; ELECTRIC FIELD; PRIORITY JOURNAL;

EID: 48249143645     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/27/275710     Document Type: Article

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