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Volumn , Issue , 2007, Pages 1164-1167

Fabrication and properties of high-Q AlN/SiO2 composite TFBAR's for above IC oscillators

Author keywords

Aluminium nitride; Q factor; RF MEMS; TCF; TFBAR

Indexed keywords

ACOUSTICS; OPTICAL DESIGN; SILICON COMPOUNDS; ULTRASONICS;

EID: 48149097521     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2007.294     Document Type: Conference Paper
Times cited : (6)

References (8)
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  • 2
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  • 3
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    • Dubois, M.-A.1    Murait, P.2
  • 4
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    • Stress and piezoelectric properties of AlN thin films deposited onto metal electrodes by pulsed direct current reactive sputtering
    • Dubois M.-A. and P. Muralt, Stress and piezoelectric properties of AlN thin films deposited onto metal electrodes by pulsed direct current reactive sputtering. J. Appl. Phys., 2001. 89: p. 6389-6395.
    • (2001) J. Appl. Phys , vol.89 , pp. 6389-6395
    • Dubois, M.-A.1    Muralt, P.2
  • 5
    • 1842427341 scopus 로고    scopus 로고
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    • Martin, F., et al., Thickness dependence of properties of highly c-axis textured AlN thin films. J.Vac.Sci.Technol. A, 2004. 22: p. 361-365.
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  • 7
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    • Low-temperature coefficient bulk acoustic wave composite resonators
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  • 8
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    • A 2 GHz reference oscillator incorporating a temperature compensated BAW resonator
    • Vancouver
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.