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Volumn 78, Issue 4, 2008, Pages

Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots

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EID: 47949091696     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.045315     Document Type: Article
Times cited : (82)

References (43)
  • 4
    • 47949113466 scopus 로고    scopus 로고
    • Also available in arXiv:0805.3247 (unpublished).
    • Also available in arXiv:0805.3247 (unpublished).
  • 5
    • 0037095434 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.65.205309
    • I. A. Merkulov, Al. L. Efros, and M. Rosen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.205309 65, 205309 (2002).
    • (2002) Phys. Rev. B , vol.65 , pp. 205309
    • Merkulov, I.A.1    Efros, A.L.2    Rosen, M.3
  • 6
    • 0037030093 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.88.186802
    • A. V. Khaetskii, D. Loss, and L. Glazman, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.186802 88, 186802 (2002).
    • (2002) Phys. Rev. Lett. , vol.88 , pp. 186802
    • Khaetskii, A.V.1    Loss, D.2    Glazman, L.3
  • 7
    • 0000400556 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.61.12639
    • A. V. Khaetskii and Yu. V. Nazarov, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.12639 61, 12639 (2000).
    • (2000) Phys. Rev. B , vol.61 , pp. 12639
    • Khaetskii, A.V.1    Nazarov, Y.V.2
  • 10
    • 0000972714 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.125019
    • S. Fafard and Nì. Allen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125019 75, 2374 (1999).
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 2374
    • Fafard, S.1    Allen, Nì.2
  • 11
    • 47949089896 scopus 로고    scopus 로고
    • The annealing may also reduce the number of point defects and, thus, improve the structure quality (Ref.) that suppresses the defect related electron spin relaxation mechanism.
    • The annealing may also reduce the number of point defects and, thus, improve the structure quality (Ref.) that suppresses the defect related electron spin relaxation mechanism.
  • 16
    • 33344478309 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.71.205319
    • O. Gunawan, H. S. Djie, and B. S. Ooi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.205319 71, 205319 (2005).
    • (2005) Phys. Rev. B , vol.71 , pp. 205319
    • Gunawan, O.1    Djie, H.S.2    Ooi, B.S.3
  • 18
    • 33750668607 scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.39.1871
    • C. G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.39. 1871 39, 1871 (1989).
    • (1989) Phys. Rev. B , vol.39 , pp. 1871
    • Van De Walle, C.G.1
  • 19
    • 0001089438 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.59.5688
    • O. Stier, M. Grundmann, and D. Bimberg, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.5688 59, 5688 (1999).
    • (1999) Phys. Rev. B , vol.59 , pp. 5688
    • Stier, O.1    Grundmann, M.2    Bimberg, D.3
  • 20
    • 2842527053 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.54.R2300
    • M. A. Cusack, P. R. Briddon, and M. Jaros, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.R2300 54, R2300 (1996).
    • (1996) Phys. Rev. B , vol.54 , pp. 2300
    • Cusack, M.A.1    Briddon, P.R.2    Jaros, M.3
  • 22
    • 0000778213 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.57.7190
    • C. Pryor, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57.7190 57, 7190 (1998).
    • (1998) Phys. Rev. B , vol.57 , pp. 7190
    • Pryor, C.1
  • 23
    • 0001558745 scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.52.11969
    • M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.52.11969 52, 11969 (1995).
    • (1995) Phys. Rev. B , vol.52 , pp. 11969
    • Grundmann, M.1    Stier, O.2    Bimberg, D.3
  • 25
    • 0000347771 scopus 로고    scopus 로고
    • PRBMDO 0163-1829 10.1103/PhysRevB.61.10959
    • M. Califano and P. Harrison, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.10959 61, 10959 (2000).
    • (2000) Phys. Rev. B , vol.61 , pp. 10959
    • Califano, M.1    Harrison, P.2
  • 26
    • 0742269384 scopus 로고    scopus 로고
    • NNOTER 0957-4484 10.1088/0957-4484/15/1/001
    • R. V. N. Melnik and M. Willatzen, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/15/1/001 15, 1 (2004).
    • (2004) Nanotechnology , vol.15 , pp. 1
    • Melnik, R.V.N.1    Willatzen, M.2
  • 31
    • 47949106888 scopus 로고    scopus 로고
    • The electron g factor in the InAs/GaAs QDs is determined by the spin-orbit interaction and can be, in principle, calculated if details of the QD conduction and valence band structure (including besides the heavy and light hole also the split-off band) is correctly modeled (see, e.g., papers by Kiselev (Ref.) Kotlyar (Ref.) and Pryor (Ref.) for details). We have estimated the g factor based on a simplified model described in the paper by Ivchenko and Kiselev (Ref.) and using the parameters determined by our model for the annealed QDs. The calculated value, ge =-0.61, for QDs annealed at 900°C is close to that estimated from experiment
    • The electron g factor in the InAs/GaAs QDs is determined by the spin-orbit interaction and can be, in principle, calculated if details of the QD conduction and valence band structure (including besides the heavy and light hole also the split-off band) is correctly modeled (see, e.g., papers by Kiselev (Ref.) Kotlyar (Ref.) and Pryor (Ref.) for details). We have estimated the g factor based on a simplified model described in the paper by Ivchenko and Kiselev (Ref.) and using the parameters determined by our model for the annealed QDs. The calculated value, ge =-0.61, for QDs annealed at 900°C is close to that estimated from experiment.
  • 34
    • 47949090144 scopus 로고    scopus 로고
    • The 60% indium content approximately corresponds to that for the QDs annealed at Ta =840°C [see Fig. 6].
    • The 60% indium content approximately corresponds to that for the QDs annealed at Ta =840°C [see Fig. 6].
  • 36
    • 47949089621 scopus 로고    scopus 로고
    • The authors thank
    • The authors thank R. V. Cherbunin for contributing the original experimental data from Ref..
    • Cherbunin, R.V.1
  • 37
  • 39
    • 32644478602 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.96.026804
    • C. E. Pryor and M. E. Flatté, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.026804 96, 026804 (2006)
    • (2006) Phys. Rev. Lett. , vol.96 , pp. 026804
    • Pryor, C.E.1    Flatté, M.E.2
  • 40
    • 35548952715 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.99.179901
    • C. E. Pryor and M. E. Flatté, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.99.179901 99, 179901 (2007).
    • (2007) Phys. Rev. Lett. , vol.99 , pp. 179901
    • Pryor, C.E.1    Flatté, M.E.2
  • 43
    • 0003998388 scopus 로고    scopus 로고
    • edited by R. C. Weast (The Chemical Rubber Company, Cleveland, Ohio
    • Handbook of Chemistry and Physics, edited by, R. C. Weast, (The Chemical Rubber Company, Cleveland, Ohio, 2001).
    • (2001) Handbook of Chemistry and Physics


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