Preparation and transparent property of the n-ZnO/p-diamond heterostructure

Chinese Physics Letters

Volumn 20, Issue 1, 2003, Pages 127-129

  Wang, Cheng Xin ^a   Gao, Chun Xiao ^a   Liu, Hong Wu ^a   Han, Yong Hao ^a   Luo, Ji Feng ^a   Shen, Cai Xia ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND FILMS; ELECTRIC RECTIFIERS; FILM PREPARATION; II-VI SEMICONDUCTORS; METALLIC FILMS; SEMICONDUCTOR DIODES; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

APPLIED VOLTAGES; DIAMOND SUBSTRATES; DIAMONDS FILMS; FORWARD CURRENTS; N-TYPE SEMICONDUCTORS; P TYPE SEMICONDUCTOR; P-TYPE; REVERSE CURRENTS; TRANSPARENT PROPERTIES; ZNO FILMS;

HETEROJUNCTIONS;

EID: 0037253440     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/1/338     Document Type: Article

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