Reversing exchange bias in thermally assisted magnetic random access memory cell by electric current heating pulses

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Papusoi, C ^a   Sousa, R C ^a   Dieny, B ^a   Prejbeanu, I L ^b   Conraux, Y ^b   MacKay, K ^b   Nozires J P ^b  

^a CEA GRENOBLE   (France)

^b Crocus Technology   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; ENERGY STORAGE; HEATING; MAGNETIC DEVICES; MAGNETIC MATERIALS; MAGNETIC STORAGE; METALLIZING; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

AMERICAN INSTITUTE OF PHYSICS (AIP); ARRHENIUS; BI LAYERS; CURRENT FLOWING; CURRENT HEATING; EL MODEL; EXCHANGE BIAS (EB); EXPERIMENTAL OBSERVATIONS; HEAT DIFFUSIONS; HEATING POWER; JOULE EFFECTS; MAGNETIC RANDOM ACCESS MEMORIES (MRAM); MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL; MAGNETIC TUNNEL JUNCTIONS (MTJS); PULSE DURATION (PD); PULSE WIDTH (PW); QUASI-EQUILIBRIUM (QE); SIGNIFICANT REDUCTION; SOURCE TERMS; STATIONARY REGIMES; TEMPERATURE PROFILING; TEMPERATURE RISE; TUNNEL BARRIERS;

RANDOM ACCESS STORAGE;

EID: 47749098515     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2951931     Document Type: Article

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