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Volumn 599, Issue 2, 2007, Pages 260-266

Photoelectrochemistry of 4H-SiC in KOH solutions

Author keywords

Etching; KOH; Oscillations; Photoelectrochemistry; SiC

Indexed keywords

ETCHING; MASS TRANSFER; OSCILLATIONS; PHOTOCHEMICAL REACTIONS; PHOTOCURRENTS; SILICON CARBIDE;

EID: 33845916827     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jelechem.2006.03.002     Document Type: Article
Times cited : (27)

References (22)
  • 1
    • 0003597031 scopus 로고
    • Harris G.L. (Ed), INSPEC, London
    • In: Harris G.L. (Ed). Properties of Silicon Carbide (1995), INSPEC, London
    • (1995) Properties of Silicon Carbide
  • 21
    • 85009426753 scopus 로고    scopus 로고
    • The mechanism of current generation for Si is quite different from that of SiC. However, passivation is caused in both cases by the passage of anodic current.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.