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Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

Volumn , Issue , 2007, Pages 49-52

The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples studied by hard X-ray photoelectron spectroscopy (HX-PES)

(8) Jin, C G a Sasaki, Y a Okashita, K a Mizuno, B a Kobata, M b Kim, J J b Ikenaga, E b Kobayashi, K b

a Ultimate Junction Technologies Inc ^* (Japan)

b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

Author keywords

Binding energy; Hard X ray photoelectron spectroscopy; Plasma doping

Indexed keywords

EID: 47649107815 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IWJT.2007.4279944 Document Type: Conference Paper

Times cited : (1)

References (8)

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