Hard X-ray photoelectron spectroscopy (HX-PES) study on chemical binding states of ultra shallow plasma-doped silicon layer for the application of advanced ULSI devices

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 116-119

  Jin, C G ^a   Sasaki, Y ^a   Okashita, K ^a   Tamura, H ^a   Ito, H ^a   Mizuno, B ^a   Okumura, T ^b   Kobata, M ^c   Kim, J J ^c   Ikenaga, E ^c   Kobayashi, K ^c  

^a Ultimate Junction Technologies Inc ^*  (Japan)

^b PANASONIC CORPORATION   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BONDS; IMPURITIES; PHOTOELECTRON SPECTROSCOPY; PLASMA APPLICATIONS; SILICON;

FLASH LAMP ANNEAL (FLA); HARD X-RAY PHOTOELECTRON SPECTROSCOPY (HX-PES); IMPURITY ACTIVATION; PLASMA DOPING (PD);

ULSI CIRCUITS;

EID: 34250186763     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iwjt.2006.220874     Document Type: Conference Paper

References (5)

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