Ion energy distributions in a pulsed plasma doping system

Journal of Applied Physics

Volumn 98, Issue 11, 2005, Pages

  Radovanov, S ^a   Godet, L ^a   Dorai, R ^a   Fang, Z ^a   Koo, B W ^a   Cardinaud, C ^b   Cartry, G ^b   Lenoble, D ^c   Grouillet, A ^c  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b UNIVERSITÉ DE NANTES   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TEMPERATURE; ION ENERGY DISTRIBUTIONS; ION GENERATION; PLASMA POTENTIAL; RELATIVE ION DENSITY;

ARGON; CARRIER CONCENTRATION; CATHODES; FLUORINE; REACTION KINETICS; SEMICONDUCTOR DOPING;

PLASMA DEVICES;

EID: 29144493405     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2136211     Document Type: Article

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