USJ formation using pulsed plasma doping

Surface and Coatings Technology

Volumn 186, Issue 1-2 SPEC. ISS., 2004, Pages 57-61

  Scheuer, Jay T ^a   Lenoble, D ^b   Reynard, J P ^b   Lallement, F ^b   Grouillet, A ^b   Arevalo, A ^a   Distaso, D ^a   Downey, D ^a   Fang, Z ^a   Godet, L ^a   Koo, B W ^a   Miller, T ^a   Weeman, J ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b STMICROELECTRONICS   (France)

Author keywords

Commercial adoption; Pulsed plasma doping; USJ formation

Indexed keywords

ION IMPLANTATION; METALS; PROCESS CONTROL; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BEAMLINE IMPLANTATION; PULSED PLASMA DOPING; SEMICONDUCTOR DEVICE NODES; ULTRA-SHALLOW JUNCTIONS;

PLASMAS;

PLASMA TREATMENT;

EID: 20244363523     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.04.011     Document Type: Article

References (4)

1. Renau A Scheuer J.T Proceedings, 14th Int Conf. Ion Implant. Tech, IEEE 2002 151 156 Elsevier B.V
2. Liebert R.B Walther S.R Felch S.B Fang Z Pedersen B Hacker D Proceedings, 13th Int Conf. Ion Implant. Tech, IEEE 2000 472 475 Elsevier B.V
3. Renau A Downey D.F Review of Low Energy Doping and Activation Technologies Japanese Society of Applied Physics Silicon Technology Division Seminar, June 24, 2003 Osaka, Japan 2003
4. Lallement F Grouillet A Juhel M Reynard J.-P Lenoble D Fangb Z Walther S.R Rault Y Godet L Scheuer J Fabrication of N+/P Ultra-Shallow Junctions by Plasma Doping for 65 nm CMOS Technology, PBII Conference, Sept. 2003, San Antonio Texas, to be published in Surface Coatings and Technology 2003