Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Signamarcheix, T ^a   Allibert, F ^a   Letertre, F ^a   Chevolleau, T ^b   Sanchez, L ^b   Augendre, E ^b   Deguet, C ^b   Moriceau, H ^b   Clavelier, L ^b   Rieutord, F ^c  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b CEA LETI   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES;

GERMANIUM OXYNITRIDE;

GERMANIUM;

EID: 47549089199     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2960345     Document Type: Article

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