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Volumn , Issue , 2007, Pages 28-31
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High Fmax GaN-HEMT with high breakdown voltage for millimeter-wave applications
a
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Author keywords
Millimeter wave FETs; Power amplifiers; Semiconductor devices
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Indexed keywords
AMPLIFIERS (ELECTRONIC);
ARSENIC COMPOUNDS;
ELECTRIC BREAKDOWN;
ELECTRIC CONDUCTIVITY;
ELECTRIC RESISTANCE;
ELECTRON MOBILITY;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HEALTH;
HETEROJUNCTION BIPOLAR TRANSISTORS;
INTEGRATED CIRCUITS;
IONIZATION OF GASES;
MILLIMETER WAVES;
POWER AMPLIFIERS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR MATERIALS;
WAVE ENERGY CONVERSION;
COMPOUND SEMICONDUCTOR (CS);
DEVICE DIMENSIONS;
GAN CAP;
GAN HEMT;
GAN HIGH ELECTRON MOBILITY TRANSISTORS (HEMT);
HIGH BREAKDOWN VOLTAGE (HBV);
MAXIMUM FREQUENCY;
MILLIMETER WAVE AMPLIFIERS;
MILLIMETER WAVE APPLICATIONS;
SCHOTTKY GATES;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 47349130850
PISSN: 15508781
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/CSICS07.2007.10 Document Type: Conference Paper |
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Times cited : (8)
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References (8)
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