Direct growth of Al nanowire arrays: Thermal expansion and field emission properties

Journal of Physical Chemistry C

Volumn 112, Issue 14, 2008, Pages 5328-5332

  Li, Liang ^a   Xu, Xijin ^b   Chew, Hanguan ^c   Huang, Xiaohu ^a   Dou, Xincun ^a   Pan, Shusheng ^a   Li, Guanghai ^a   Zhang, Lide ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DIFFRACTION; ELECTRIC WIRE; EPITAXIAL GROWTH; FIELD EMISSION; IMAGING TECHNIQUES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OPTICAL DESIGN; SILICON; SUBSTRATES; THERMAL SPRAYING; THERMAL STRESS; VAPORS; X RAY ANALYSIS; X RAY DIFFRACTION;

AL FILM; AMERICAN CHEMICAL SOCIETY (ACS); DIRECT GROWTH; ELECTRON BEAM EVAPORATION (EBE); EXPANSION COEFFICIENTS; EXPANSION MECHANISMS; FIELD EMISSION (FE) PROPERTIES; HIGH TEMPERATURE X RAY DIFFRACTION (HT XRD); IN-SITU; INCIDENT ANGLES; LARGE AREAS; LATTICE (CO); NANO-DEVICES; NANOWIRE ARRAYS; OBLIQUE-ANGLE DEPOSITION; POTENTIAL FIELDS; SI(2 1 1) SUBSTRATES; SINGLE-CRYSTALLINE; VAPOR FLUXES; X RAY DIFFRACTION (XRD);

THERMAL EXPANSION;

EID: 47149109657     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp710230c     Document Type: Article

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