Thermal expansion of a boron-doped diamond single crystal at low temperatures

Journal of Physics Condensed Matter

Volumn 10, Issue 6, 1998, Pages 1267-1272

  Saotome, Takao ^a   Ohashi, Kazutoshi ^a   Sato, Toshimaro ^a   Maeta, Hiroshi ^b   Haruna, Katsuji ^a   Ono, Fumihisa ^c  

^a TAMAGAWA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c OKAYAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006501632     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/6/010     Document Type: Article

References (8)

1. Haruna K, Maeta H, Ohaski K and Koike T 1992 Japan. J. Appl. Phys. 31 2527
2. Bond W L 1960 Crystal 13 814
3. Davies G 1994 The Properties and Growth of Diamond ed G Davies (London: Institute of Electrical Engineers) p 243
4. Barron T H K, Collins J G and White G K 1980 Adv. Phys. 4 609
5. Kittel C 1971 Introduction to Solid State Physics (New York: Wiley) p 129
6. Ramdas A K 1994 The Properties and Growth of Diamond ed G Davies (London: Institute of Electrical Engineers) p 13
7. Berman R 1994 The Properties and Growth of Diamond ed G Davies (London: Institute of Electrical Engineers) p 23
8. Litzman O 1975 Phys. Status Solidi b 70 333