Electronic structure and binding energy of a hydrogenic impurity in a hierarchically self-assembled GaAs Alx Ga1-x As quantum dot

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Li, Shu Shen ^a   Xia, Jian Bai ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; GALLIUM COMPOUNDS; PARAMETER ESTIMATION; SELF ASSEMBLY;

EFFECTIVE MASS ENVELOPE FUNCTION THEORY; HYDROGENIC IMPURITY; IMPURITY ENERGY LEVELS; QD STRUCTURE PARAMETERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750531298     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358406     Document Type: Article

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