Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors

Applied Physics Letters

Volumn 92, Issue 26, 2008, Pages

  Singh, K A ^a   Sauve G ^b   Zhang, R ^b   Kowalewski, T ^b   McCullough, R D ^b   Porter, L M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CONTACT RESISTANCE; FIELD EFFECT TRANSISTORS; METALLIZING; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AMERICAN INSTITUTE OF PHYSICS (AIP); ELECTRICAL RESULTS; FIELD-EFFECT MOBILITY (FEM); NANO STRUCTURING; NANO-FIBRILS; POLYMER CHAINS; QUALITATIVE MODELLING; REGIOREGULAR POLY (R R P3HT);

HEALTH;

EID: 46649109554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2955515     Document Type: Article

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