메뉴 건너뛰기




Volumn 59, Issue 15, 1999, Pages 10064-10070

Simulations of gan using an environment-dependent empirical tight-binding model

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000611622     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.10064     Document Type: Article
Times cited : (19)

References (32)
  • 1
    • 0030036912 scopus 로고    scopus 로고
    • G. Fasol, Science272, 1751 (1996).
    • (1996) Science , vol.272 , pp. 1751
    • Fasol, G.1
  • 12
    • 84927429086 scopus 로고
    • Molteni, Europhys. Lett.24, 659 (1993).
    • (1993) Europhys. Lett. , vol.24 , pp. 659
  • 24
    • 85037874946 scopus 로고    scopus 로고
    • J. Neugebauer and C. G. Van de Walle, in, edited by C. H. Carter Jr., G. Gildenblat, S. Nakamura, and R. J. Nemanich, MRS Symposia Proceedings 339 (Materials Research Society, Pittsburgh, 1994)
    • J. Neugebauer and C. G. Van de Walle, in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter Jr., G. Gildenblat, S. Nakamura, and R. J. Nemanich, MRS Symposia Proceedings No. 339 (Materials Research Society, Pittsburgh, 1994).
  • 26
    • 85037875545 scopus 로고    scopus 로고
    • Note: the results reported in this work were preliminary; the later work, Ref., is presumably more complete
    • Note: the results reported in this work were preliminary; the later work, Ref. 3, is presumably more complete.
  • 28
    • 0031674953 scopus 로고    scopus 로고
    • P. E. A. Turchi, A. Gonis, and L. Colombo, Materials Research Society, and, in, edited by, 491 (, Pittsburgh, p
    • H. Haas, C Z. Wang, M. Fahnle, C. Elsasser, and K M. Ho, in Tight-Binding Approach to Computational Materials Science, edited by P. E. A. Turchi, A. Gonis, and L. Colombo, MRS Symposia Proceedings No. 491 (Materials Research Society, Pittsburgh, 1998), p. 327.
    • (1998) MRS Symposia Proceedings , pp. 327
    • Haas, H.1    Wang, C.Z.2    Fahnle, M.3    Elsasser, C.4    Ho, K.M.5
  • 29
    • 0031361132 scopus 로고    scopus 로고
    • F. A. Ponce, S. P. Den Baars, B. K. Meyer, S. Nakamura, and S. Strite, Materials Research Society, and, in, edited by, 482 (, Pittsburgh, p
    • D. E. Boucher, Z A. Gàl, G G. DeLeo, and W B. Fowler, inNitride Semiconductors, edited by F. A. Ponce, S. P. Den Baars, B. K. Meyer, S. Nakamura, and S. Strite, MRS Symposia Proceedings No. 482 (Materials Research Society, Pittsburgh, 1998), p. 941.
    • (1998) MRS Symposia Proceedings , pp. 941
    • Boucher, D.E.1    Gàl, Z.A.2    DeLeo, G.G.3    Fowler, W.B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.