Platinum deposition onto Si single crystal surfaces I. Chemical, electronic, and morphological surface processes under depletion conditions

Journal of the Electrochemical Society

Volumn 155, Issue 8, 2008, Pages

  Munoz A G ^a   Lewerenz, H J ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

(1 1 0) SURFACE; (I ,J) CONDITIONS; ATOMIC FORCE (AF); ATOMIC TERRACES; CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; CHEMICAL PROCESSING; CONCENTRATION (COMPOSITION); CRYSTAL SURFACES; DEFECT SITES; ELECTROCHEMICAL SOCIETY (ECS); ELECTROCHEMICAL TECHNIQUES; INITIAL STAGES; POTENTIAL DEPENDENCE; POTENTIAL DEPENDENT; PT DEPOSITION; RATE INCREASES; SI (111); SI(0 0 1) SURFACE; STEP BUNCHING; STEP EDGES; STEP HEIGHT (SH); SURFACE PROCESSING; SURFACE STATE DENSITIES; SURFACE STATES; TOPOGRAPHICAL ANALYSIS; ULTRATHIN SILICON OXIDE;

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; CHEMICAL ENGINEERING; CHEMICAL REACTIONS; CONSERVATION; CURVE FITTING; ELECTRODEPOSITION; METALLIZING; MICROSCOPIC EXAMINATION; PLATINUM; REDUCTION; SCALE (DEPOSITS); SCANNING PROBE MICROSCOPY; SILICON; SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS; SOIL CONSERVATION; STANDARDS; SURFACE ANALYSIS; SURFACE POTENTIAL;

SINGLE CRYSTAL SURFACES;

EID: 46649083458     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2929834     Document Type: Article

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