Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 592-596

  Bozanic, A ^a   Majlinger, Z ^a   Petravic, M ^a   Gao, Q ^b   Llewellyn, D ^b   Crotti, C ^c   Yang, Y W ^d  

^a University of Rijeka Radmile   (Croatia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c CNR   (Italy)

^d NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; BINDING ENERGY; COMPLEXATION; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY ABSORPTION; LAW ENFORCEMENT; LUMINESCENCE OF ORGANIC SOLIDS; MOLECULES; NITROGEN; PHOTOELECTRICITY; PHOTOEMISSION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TELEMETERING SYSTEMS; X RAY ABSORPTION;

CORE LEVELS; HIGH-RESOLUTION MEASUREMENTS; III-V COMPOUND SEMICONDUCTORS; LOW ENERGIES; LOW RESOLUTION (LR); MOLECULAR NITROGEN; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE (NEXAFS) SPECTRA; NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURE (NEXAFS); NITROGEN BOMBARDMENT; PHOTOEMISSION SPECTROSCOPY (PES); PHOTOEMISSION SPECTRUM; VIBRATIONAL FINE STRUCTURE;

EMISSION SPECTROSCOPY;

EID: 46449134079     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2929851     Document Type: Article

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