Barrier capability of Zr-N films with different density and crystalline structure in Cu/Si contact systems

Materials Letters

Volumn 62, Issue 21-22, 2008, Pages 3761-3763

  Wang, Ying ^a   Zhao, Chun hui ^a   Cao, Fei ^a   Yang, Da wei ^a  

^a HARBIN ENGINEERING UNIVERSITY   (China)

Author keywords

Diffusion barrier; Semiconductors; Thin films; Zr N

Indexed keywords

ANNEALING; COMPUTER NETWORKS; CRYSTALLINE MATERIALS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; FILM GROWTH; HEALTH; METALLIC FILMS; SILICON; SPUTTERING; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY; ZIRCONIUM;

(TI , AL)N FILMS; AUGER ELECTRONS; BARRIER CAPABILITY; COMPARISON STUDIES; CONTACT SYSTEMS; CRYSTALLINE STRUCTURES; ELSEVIER (CO); FOUR POINT PROBE (FPP); SHEET RESISTANCE MEASUREMENTS; SI(2 1 1) SUBSTRATES; X RAY DIFFRACTION (XRD);

AUGER ELECTRON SPECTROSCOPY;

EID: 46449100012     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2008.04.058     Document Type: Article

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