Metastability of band-gap energy in GaInNAs compound investigated by photoreflectance

Acta Physica Polonica A

Volumn 106, Issue 2, 2004, Pages 249-263

  Kudrawiec, R ^a   Misiewicz, J ^a   Pavelescu, E M ^b   Konttinen, J ^b   Pessa, M ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; LIGHT REFLECTION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAMAN SCATTERING; RESONANCE; SHRINKAGE; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

BAND GAP ENERGY; BOSE EINSTEIN PARAMETERS; METASTABILITY; PHOTOREFLECTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4644371953     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.106.249     Document Type: Conference Paper

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