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Volumn 331, Issue 3-4, 2004, Pages 248-251
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Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition
a
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Author keywords
Color centers; FTIR; Ge oxide film; Laser deposition; Photoluminescence
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Indexed keywords
COLOR CENTERS;
FILM GROWTH;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
GERMANIUM OXIDES;
OPTICAL PROPERTIES;
OXIDE FILMS;
OXYGEN;
PHOTOLUMINESCENCE;
PULSED LASER DEPOSITION;
PULSED LASERS;
SILICON COMPOUNDS;
SUBSTRATES;
THALLIUM ALLOYS;
THIN FILMS;
FOURIER TRANSFORM INFRARED SPECTRA;
FTIR;
LASER DEPOSITIONS;
NEUTRAL OXYGEN VACANCY;
OXIDE THIN FILMS;
OXYGEN PRESSURE;
SILICON SUBSTRATES;
SUBSTRATE TEMPERATURE;
SI-GE ALLOYS;
GERMANIUM;
OXIDE;
OXYGEN;
SILICON;
ARTICLE;
CITRIC ACID CYCLE;
ELECTROCHEMISTRY;
FILM;
FOURIER ANALYSIS;
INFRARED SPECTROMETRY;
LASER;
MOLECULAR DYNAMICS;
MOLECULAR INTERACTION;
OPTICS;
OXYGEN TENSION;
PULSED ELECTRIC FIELD;
QUALITATIVE ANALYSIS;
TECHNIQUE;
TEMPERATURE DEPENDENCE;
ULTRAVIOLET RADIATION;
VIBRATION;
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EID: 4644370906
PISSN: 03759601
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physleta.2004.07.029 Document Type: Article |
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Times cited : (13)
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References (12)
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