Homoepitaxy of 4H-SiC on trenched (0001) Si face substrates by chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4105-4109

  Chen, Yi ^a,c   Kimoto, Tsunenobu ^a   Takeuchi, Yuichi ^b   Malhan, Rajesh Kumar ^b   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Characterization; Chemical vapor deposition process; Homoepitaxy; trench structure; Silicon carbide

Indexed keywords

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; EPITAXIAL GROWTH; MORPHOLOGY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; THERMOOXIDATION;

EPILAYERS; HOMOEPITAXY; TRENCH STRUCTURES;

SILICON CARBIDE;

EID: 4644307316     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4105     Document Type: Article

References (15)

1. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara: IEEE Electron Device Lett. 20 (1999) 611.
2. P. Friedrichs, H. Mitlehner, K. O. Dohnke, D. Peters, R. Schoner, U. Weinert, E. Baudelot and D. Stephani: Proc. Int. Symp. Power Semicond. Devices & ICs. 2000, p. 213.
3. D. T. Morisette, J. A. Cooper, Jr., M. R. Melloch, G. M. Dolny, P. M. Shenoy, M. Zafrani and J. Gladish: IEEE Trans. Electron Devices 48 (2001) 349.
4. S. Ryu, A. K. Agarwal, R. Singh and J. W. Palmour: IEEE Electron Device Lett. 22 (2001) 124.
5. K. Christiansen, T. Dalibor, R. Helbig, S. Christiansen and H. P. Strunk:.Mater. Sci. Forum 264-268 (1998) 135.
6. S. Onda, R. Kumar and K. Hara: Phys. Status Solidi A162 (1997) 369.
7. K. Hara: Mater. Sci. Forum 264-268 (1998) 901.
8. N. Nordell, S. Karlsson and A. O. Konstantinov: Appl. Phys. Lett. 72 (1998) 197.
9. H. Matsunami and T. Kimoto: Mater. Sci. Eng. R 20 (1997) 125.
10. T. Kimoto and H. Matsunami: J. Appl. Phys. 76 (1994) 7322.
11. H. S. Kong, J. T: Glass and R. F. Davis: J. Appl. Phys. 64 (1988) 2672.
12. T. Ueda, H. Nishino and H. Matsunami: J. Cryst. Growth 104 (1990) 695.
13. S. Nakamura, T. Kimoto and H. Matsunami: Appl. Phys. Lett. 76 (2000) 3412.
14. T. Kimoto and H. Matsunami: J. Appl. Phys. 78 (1995) 3132.
15. A. O. Konstantinov, C. Hallin, O. Kordina and E. Janzen: Inst. Phys. Conf. Ser. 142 (1996) 249.