Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 363-365

  Golz A ^a   Gross S ^a   Janssen, R ^a   Stein Von Kamienski, E ^a   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Gas anneals; Interface trap density; Plasma

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; OXIDES; PLASMA APPLICATIONS; SILICON CARBIDE; THERMOOXIDATION;

GAS ANNEALS; INTERFACE TRAP DENSITY; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD);

HETEROJUNCTIONS;

EID: 0012757779     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02006-5     Document Type: Article

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