Reliability study of InGaP/GaAs HBT for 28V operation

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 191-194

  Chau, Frank Hin Fai ^a   Lin, Barry Jia Fu ^a   Chen, Yan ^a   Kretschmar, Mark ^a   Lee, Chien Ping ^a,b   Wang, Nan Lei Larry ^a   Sun, Xiaopeng ^a   Ma, Wenlong ^a   Xu, Sarah ^a,c   Hu, Peter ^a  

^a WJ Communications Inc   (United States)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c SKYWORKS SOLUTIONS INC   (United States)

Author keywords

HBT reliability; High voltage HBT; InGaP HBT; Wafer level reliability

Indexed keywords

ELECTRIC CONDUCTIVITY; SEMICONDUCTOR MATERIALS;

(+ MOD 2N) OPERATION; (E ,3E) PROCESS; COMPOUND SEMICONDUCTOR (CS); HIGH-VOLTAGE (HV); INGAP/GAAS HBT; INP-BASED HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) TECHNOLOGY; LONG TERM RELIABILITY; LOW-VOLTAGE (LV); RELIABILITY ASPECTS;

INTEGRATED CIRCUITS;

EID: 46149123453     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319960     Document Type: Conference Paper

References (7)

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