High efficiency 28V class AB InGaP/GaAs HBT MMIC amplifier with integrated bias circuit

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 707-710

  Wang, N L ^a   Dunnrowicz, C ^a   Chen, X ^a   Ma, W ^a   Chau, H F ^a   Sun, X ^a   Chen, Y ^a   Lin, B ^a   Lo, I L ^b   Huang, C H ^b   Yang, M H T ^b  

^a EiC Corp   (United States)

^b Visual Photonics Epitaxy Co Ltd   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; HEAT RESISTANCE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

WAFER LEVEL RELIABILITY (WLR);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0042594467     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. B. Lin, "InGaP HBTs offer Enhanced Reliability," Applied Microwave & Wireless, pp. 115-116, Dec. 2000
2. D. Hill, T.S.Kim, "28V Low Thermal-Impedance HBT with 20W CW Output Power," IEEE Trans. Microwave Theory and Tech., vol. MTT-45, no. 12, pp.2224-2228, Dec 1997.
3. P.Kurpas et al, "High-voltage GaAs Power-HBTs for Base-Station Amplifiers," 2001 IEEE MTT-S Int. Microwave Symp. Dig., pp. 633-636, June 2001.
4. N.L. Wang, W.J.Ho, J.A. Higgins, "AlGaAs/GaAs HBT Linearity Characteristics," IEEE Trans. Microwave Theory and Tech., vol. MTT-42, no. 10, pp.1845-1850, Oct. 1994
5. H.F.Chau et al, "Wafer level reliability tests of InGaP HBTs using High Current Stress," 2002 IEEE GaAs Mantech Dig.
6. D.E. Dalson et al, "CW measurement of HBT Thermal Resistance," IEEE Trans. Elec. Dev. 39-10, pp. 2235-2239, 1992.