Reliability of InGaP emitter HBTs at high collector voltage

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 73-76

  Yeats, Bob ^a   Bonse, Mathias ^a   Chandler, Paul ^a   Culver, Morgan ^a   D'Avanzo, Don ^a   Essilfie, Gilbert ^a   Hutchinson, Craig ^a   Kuhn, David ^a   Low, Tom ^a   Shirley, Tim ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

InGaP HBT reliability breakdown lifetest HTOL BVceo BVcbo

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; RELIABILITY; SEMICONDUCTING INDIUM PHOSPHIDE;

COLLECTOR VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036438260     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Bob Yeats, Paul Chandler, Morgan Culver, Don D'Avanzo, Gilbert Essilfie, Craig Hutchinson, David Kuhn, Tom Low, Tim Shirley, Sunil Thomas, and Wes Whiteley, "Reliability of InGaP-Emitter HBTs", 2000 MANTECH, pp. 131 - 135.
2. T.S. Low, C.P. Hutchinson, P.C. Canfield, T.S. Shirley, R.E. Yeats, J.S.C. Chang, G.K. Essilfie, M.K. Culver, W.C. Whiteley, D.C. D'Avanzo, "Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability", GaAs IC Symposium, 153-156, 1998.
3. T. Low, T. Shirley, C. Hutchinson, G. Essilfie, W. Whiteley, B. Yeats, D. D'Avanzo, "InGaP HBT technology for RF and microwave instrumentation", Solid-State Elec., 43, 1437-1444, 1999.
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7. B. Yeats, "Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods", GaAs IC Symp., 59-62, 1999.