Corrigendum to: "High-quality InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy" [Superlatt. Microstruct. 40 (2006) 214-218] (DOI:10.1016/j.spmi.2006.09.015);High-quality InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 214-218

  Hiroki, M ^a   Yokoyama, H ^a   Watanabe, N ^a   Kobayashi, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

GaN; Heterostructures; InAlN; Nitride semiconductor

Indexed keywords

ELECTRON MOBILITY; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

HETEROINTERFACES; NITRIDE SEMICONDUCTORS; OPTIMAL CONDITIONS; SHEET ELECTRON DENSITY;

HETEROJUNCTIONS;

EID: 33845232859     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.06.004     Document Type: Erratum

References (8)

1. Kuzmík J. IEEE Electron Device Lett. 22 (2001) 510
2. Ambacher O., Dimitrov R., Stutzmann M., Foutz B.E., Murphy M.J., Smart J.A., Shealy J.R., Weimann N.G., Chu K., Chumbes M., Green B., Sierakowski A.J., Schaff W.J., and Eastman L.F. Phys. Status Solidi B 216 (1999) 381
3. Higashiwaki M., and Matsui T. Jpn. J. Appl. Phys. 43 (2004) L768
4. Dadgar A., Schulze F., Bläsing J., Diez A., Krost A., Neuburger M., Kohn E., Daumiller I., and Kunze M. Appl. Phys. Lett. 85 (2004) 5400
5. Katz O., Mistele D., Meyler B., Bahir G., and Salzman J. Electron. Lett. 40 (2004) 1304
6. Ibbetson J.P., Fini P.T., Ness K.D., DenBaars S.P., Speck J.S., and Mishra U.K. Appl. Phys. Lett. 77 (2000) 250
7. Smorchkova I.P., Chen L., Mates T., Shen L., Heikman S., Moran B., Keller S., DenBaars S.P., Speck J.S., and Mishra U.K. J. Appl. Phys. 90 (2001) 5196
8. Shen L., Heikman S., Moran B., Coffie R., Zhang N.-Q., Buttari D., Smorchkova I.P., Keller S., DenBaars S.P., and Mishra U.K. IEEE Trans. Electron Dev. 22 (2001) 457